ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 100µA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The BSS139H6327XTSA1 is an N-channel depletion mode MOSFET from Infineon's SIPMOS series, housed in a surface-mount SOT-23-3 package. It features a maximum drain-source voltage of 250 V and a continuous drain current of 100 mA at 25°C. The device exhibits a typical on-resistance of 7.8 Ohms at zero gate-source voltage and a low gate charge of 2.3 nC. Designed for automotive reliability, it meets AEC-Q100 standards and operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel depletion mode operation providing normally-on functionality suitable for constant current sources
- Automotive-grade qualification compliant with AEC-Q100 standards for high reliability
- Low gate charge characteristics enabling efficient performance in high-frequency switching applications
Applications
- High-voltage constant current source circuits
- Automotive electronic systems requiring robust small-signal switching
- Level shifting interfaces in high-voltage environments
Procurement Notes
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required AEC-Q100 automotive grade certification. Cross-reference the exact part number with manufacturer datasheets to validate pinout configuration and thermal resistance parameters before integration into production designs.
Selection Notes
Select this component when a normally-on N-channel switch is required for high-voltage isolation or constant current regulation. The 250V breakdown voltage supports demanding industrial and automotive loads. Consider the 7.8 Ohm on-resistance for power dissipation calculations in low-current applications where minimal gate drive energy is preferred.
Part Context
This device belongs to Infineon's SIPMOS family of small-signal MOSFETs, engineered for compact designs and high-frequency operations. The series offers various voltage ratings from 60V to 600V in standard packages like SOT-23 and SOT-223. These components are optimized for low negative turn-off voltages and wide safe operating areas, simplifying circuit design complexity.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Potential alternatives may include other N-channel depletion MOSFETs with compatible 250V ratings and SOT-23-3 footprints, provided electrical parameters such as threshold voltage and on-resistance align with the original design requirements.
