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Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-3-5
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS139H6906XTSA1 is an N-channel depletion mode small signal MOSFET manufactured by Infineon Technologies. It features a 250 V drain-source breakdown voltage and supports a continuous drain current of 100 mA at 25°C. The device exhibits a maximum on-resistance of 7.8 Ohms at zero gate-source voltage and requires a negative gate-source threshold voltage ranging from -1 V to -2.1 V for turn-off. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 360 mW.
Feature Summary
- Depletion mode operation providing normally-on functionality suitable for constant current sources
- High voltage capability with 250 V drain-source breakdown rating
- Automotive qualification compliant with AEC-Q100 standards
Applications
- Constant current source circuits
- Industrial control systems
- Consumer electronics applications
Procurement Notes
Verify the specific suffix H6906XTSA1 against official Infineon documentation to confirm package type and reel specifications. Confirm that the component meets AEC-Q100 automotive reliability requirements if intended for such environments. Ensure design parameters align with the specified 360 mW power dissipation limit under expected operating conditions.
Selection Notes
Select this component when a normally-on N-channel MOSFET with high voltage blocking capability is required. The depletion mode characteristic distinguishes it from standard enhancement-mode devices. Verify that the negative threshold voltage range matches the control circuit's ability to reliably turn off the device. Consider the SOT-23-3 package constraints for thermal management in compact designs.
Part Context
This part belongs to Infineon's SIPMOS series of small signal power MOSFETs designed for industrial and consumer markets. The BSS139 family offers robust performance in compact surface-mount packages. These devices are engineered for applications requiring reliable switching or linear operation in space-constrained environments.
Replacement Considerations
Consult official Infineon cross-reference data for verified substitutes. Generic equivalents may not match the specific depletion mode characteristics or AEC-Q100 qualification status.
