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Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 0.1mA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS139L6906HTSA1 is an N-channel depletion mode small signal MOSFET manufactured by Infineon Technologies. It features a silicon technology base and is housed in a surface-mount SOT-23-3 package. The device supports a drain-source breakdown voltage of 250 V and a continuous drain current of 100 mA. Key electrical parameters include a gate-source voltage range of -20 V to +20 V, a typical gate charge of 2.3 nC, and a maximum power dissipation of 360 mW. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- N-channel depletion mode operation for normally-on functionality
- High drain-source voltage rating suitable for signal switching
- Compact SOT-23-3 surface-mount packaging
Applications
- Industrial applications requiring small signal switching
- Consumer electronics circuit protection
- General-purpose logic level translation
Procurement Notes
Verify the specific suffix L6906 against official Infineon documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure that the component designation matches the exact datasheet version required for your design, as manufacturing updates may affect pinout or thermal characteristics without changing the primary model number.
Selection Notes
Select this component when a normally-on N-channel MOSFET with high voltage tolerance is required in a compact footprint. The depletion mode characteristic distinguishes it from standard enhancement-mode devices, making it suitable for specific biasing or fail-safe configurations where the channel conducts at zero gate-source voltage.
Part Context
This part belongs to the BSS139 series of small signal MOSFETs designed for industrial and consumer markets. The series is characterized by its robustness in low-power switching applications. The specific HTSA1 suffix indicates the standard tape-and-reel packaging format used for automated assembly processes.
Replacement Considerations
Cross-reference with other BSS139 variants such as BSS139I or BSS139H6327XT only if their respective datasheets confirm identical pinouts, electrical limits, and package dimensions. Verify that any substitute maintains the depletion mode characteristic.
