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The BSS169 E6906 is a single N-channel depletion-mode MOSFET manufactured by Infineon Technologies using silicon technology. It is housed in a surface-mount SOT-23-3 package and holds AEC-Q100 automotive qualification. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 170 mA, and a maximum gate-source voltage range of -20 V to +20 V. The device exhibits a typical on-resistance of 2.9 Ohms, a gate charge of 2.1 nC, and a power dissipation capacity of 360 mW. Operating temperatures span from -55°C to +150°C.
Verify the specific suffix E6906 against official Infineon documentation to confirm exact ordering details. Confirm component status as obsolete or end-of-life prior to procurement planning. Ensure compatibility with existing design specifications regarding the depletion-mode characteristic and thermal requirements.
Select this component when a normally-on N-channel switch is required within an automotive environment. Consider the 100V rating and 170mA current limit for appropriate load handling. Verify that the SOT-23-3 footprint aligns with the PCB layout constraints and that the depletion mode behavior fits the circuit logic requirements.
This part belongs to the BSS169 series of single N-channel depletion-mode MOSFETs. These components are designed for robust performance in demanding environments, featuring high voltage tolerance and reliable switching characteristics suitable for automotive and industrial applications where fail-safe or default-on states are necessary.
Public confirmed substitute part numbers: BSS169H6327XTSA1, BSS169H6906XTSA1.