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Product Detailed Parameters
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 7 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：68 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS169H6906XTSA1 is a single N-channel depletion mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 100 V, a continuous drain current (Id) of 170 mA, and a maximum on-resistance (Rds(on)) of 2.9 Ohms. The device operates with a gate-source voltage range of -20 V to +20 V and features a typical gate charge (Qg) of 2.1 nC. It supports a power dissipation of 360 mW and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Depletion mode operation ensures the device is normally on at zero gate-source voltage, suitable for constant current source applications.
- Automotive qualification compliant with AEC-Q100 standards for reliability in automotive environments.
- High-frequency switching capability supported by low gate charge and fast rise/fall times.
Applications
- Switching Mode Power Supplies (SMPS)
- Constant Current Source circuits
- LED Driver Reference Designs
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the component meets AEC-Q100 requirements if used in automotive contexts. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a normally-on N-channel switch with low current handling capabilities. The 100V rating suits low-voltage isolation or level-shifting tasks. Consider the 2.9 Ohm on-resistance for thermal management in high-duty-cycle applications. Verify compatibility with control logic voltages given the depletion mode characteristic.
Part Context
This part belongs to the BSS169 series of N-channel depletion mode MOSFETs from Infineon. These devices are designed for compact designs and offer robust performance in small packages like SOT-23. They serve as alternatives to traditional JFETs in modern circuit designs requiring higher efficiency and durability.
Replacement Considerations
The BSS169H6327XTSA1 is a verified substitute within the same series. Note that the BSS169 H6906 variant is listed as obsolete; verify availability and lifecycle status for long-term production needs.
