BSS169L6327HTSA1

Overview

The BSS169L6327HTSA1 is a depletion-mode N-channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a PG-SOT-23 package and operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a drain-source breakdown voltage (V(BR)DSS) of 100 V, a continuous drain current (ID) of 0.17 A at 25 °C, and a maximum on-state resistance (RDS(on)) of 12 Ω. The device exhibits a gate threshold voltage (VGS(th)) typically between -2.9 V and -1.8 V, with total gate charge (Qg) ranging from 2.1 nC to 2.8 nC. It supports a reverse diode dv/dt rating of 6 kV/µs.

Feature Summary

• Depletion mode operation suitable for normally-on applications
• High dv/dt capability rated at 6 kV/µs for fast switching environments
• Available with sorted gate threshold voltage bands indicated on the reel label

Applications

• High-voltage switching circuits requiring normally-on behavior
• Fast-switching power conversion topologies
• Load switch applications in automotive or industrial systems

Procurement Notes

Verify the specific gate threshold voltage band required for your design, as the L6327 suffix indicates standard sorting without explicit band selection in the part number. Confirm that the PG-SOT-23 footprint matches your PCB layout. Ensure the depletion mode characteristic aligns with your circuit's default state requirements before finalizing procurement.

Selection Notes

Select this component when a normally-on N-channel MOSFET is necessary. The low gate charge facilitates efficient driving in high-frequency applications. Consider the thermal resistance of 350 K/W for heat dissipation planning. Verify that the 100 V breakdown voltage meets the system's peak voltage stresses under all operating conditions.

Part Context

This component belongs to Infineon's SIPMOS series of small-signal transistors. The 'L6327' suffix denotes a standard tape and reel packaging configuration containing 3000 pieces per reel. It is distinct from enhanced-mode devices and is designed for specific analog and power switching roles where a conductive state at zero gate bias is required.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.