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Product Detailed Parameters
- Description：MOSFET P-CH 240V 200MA SOT89
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：560mW (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
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Overview
The BSS192,115 is a P-channel vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (D-MOSFET) manufactured by Nexperia. It operates with a drain-source voltage of -240 V and a gate-source voltage range of -20 V to +20 V. The device supports a continuous drain current of -200 mA at 25 °C when the gate-source voltage is -10 V. Its typical on-state resistance is 10 Ω under standard test conditions. The component is housed in a SOT89 surface-mounted package designed for efficient heat transfer.
Feature Summary
- Direct interface capability with complementary CMOS transistors and transistor-transistor logic devices
- Very fast switching performance characteristics
- Elimination of secondary breakdown phenomena
Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component version aligns with the latest product data sheet revision history. Ensure the sourcing channel provides authentic Nexperia products to guarantee compliance with specified electrical limits and thermal characteristics.
Selection Notes
Select this component for applications requiring high-voltage P-channel switching capabilities within a medium power surface-mount form factor. Evaluate the thermal resistance parameters against the expected junction temperature constraints. Consider the direct logic interface feature to simplify drive circuitry requirements without additional level shifting components.
Part Context
This device belongs to the Nexperia discrete semiconductor portfolio, specifically categorized as a vertical D-MOS transistor. It utilizes a plastic surface-mounted package with an exposed die pad to facilitate effective thermal dissipation. The component is engineered for robust operation in industrial and consumer electronic environments requiring reliable high-voltage switching.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and absolute maximum ratings to ensure compatibility. Verify that any alternative component meets the specific voltage and current requirements of the original design.
