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Product Detailed Parameters
- Description：MOSFET P-CH 250V 190MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS192PL6327HTSA1 is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 190 mA at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation (Pd) of 1 W. Packaged in the PG-SOT23 surface-mount format, it utilizes silicon technology for reliable performance in high-voltage switching applications.
Feature Summary
- High breakdown voltage capability suitable for demanding power switching environments
- Enhancement mode operation with low gate charge characteristics
- Robust thermal performance supporting extended operating temperatures
Applications
- High-side load switching circuits
- Power management modules requiring isolated control
- Automotive electronic control units
Procurement Notes
Verify the specific suffix L6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with existing PCB footprints designated for PG-SOT23 packages. Cross-reference electrical limits with system requirements before integration.
Selection Notes
Select this component when high-voltage isolation is required in compact designs. Evaluate the trade-off between the 190 mA current limit and the 250 V rating against alternative low-voltage options. Confirm that the package thermal resistance meets the application's heat dissipation needs without additional cooling infrastructure.
Part Context
This part belongs to Infineon's P-channel MOSFET portfolio, designed for general-purpose switching. It complements N-channel counterparts in bridge configurations. The SOT-23 form factor allows for dense board layouts in consumer and industrial electronics where space constraints are critical.
Replacement Considerations
Check for direct pin-compatible alternatives with matching Vdss and Id ratings. Verify that substitute devices maintain similar gate threshold voltages to ensure compatible drive logic levels.
