BSS205N

$0.13

Description：20V 2.5A [email protected],2.5A 500MW 1.2
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e469a544ad3 Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：20V 2.5A [email protected],2.5A 500MW 1.2
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
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Current - Continuous Drain (Id) @ 25°C：-
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Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
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Mounting Type：-
Supplier Device Package：-
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BSS205N

Overview

The BSS205N is a 20V, 2.5A N-Channel MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. in an SOT-23 package. It utilizes Trench Power LV MOSFET technology to achieve low on-state resistance of 50mΩ at VGS=4.5V and 85mΩ at VGS=2.5V. The device supports a maximum junction temperature of 150°C and features a continuous drain current of 2.5A with a pulse drain current capability of 10A.

Feature Summary

Trench Power LV MOSFET technology for high power and current handling capability
Low gate charge and fast switching characteristics suitable for PWM applications
Compact SOT-23 surface mount package design

Applications

PWM applications
Load switch circuits

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. against the provided datasheet documentation. Confirm the specific part number BSS205N matches the requested specifications. Ensure the component is sourced from authorized channels to guarantee authenticity and adherence to the published electrical parameters.

Selection Notes

Select this component for low-voltage switching applications requiring compact integration. The SOT-23 package suits space-constrained designs. Evaluate thermal management requirements based on the 178 °C/W junction-to-ambient thermal resistance rating for ambient temperature operation scenarios.

Part Context

This N-Channel enhancement mode MOSFET belongs to the discrete power devices category. It is designed for general-purpose switching and amplification tasks within electronic circuits. The device operates with a maximum drain-source voltage of 20V and a gate-source voltage limit of ±12V.

Replacement Considerations

Consult official manufacturer substitution lists or cross-reference databases for verified equivalent components. Ensure any alternative part maintains compatible pinout, voltage ratings, and package dimensions before implementation.