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Product Detailed Parameters
- Description：MOSFET N-CH 20V 2.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：50mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：419 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS205NL6327HTSA1 is an N-channel MOSFET from Infineon Technologies, designed for switching and amplification in low-power circuits. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 2.5 A. The device utilizes a SOT-23-3 surface-mount package. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±8 V and a typical on-resistance (Rds(on)) of 0.09 ohms at Vgs = 4.5 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel silicon MOSFET technology optimized for low-voltage switching applications
- Single configuration with integrated body diode for efficient circuit protection
- Surface-mount SOT-23-3 packaging for compact board space utilization
Applications
- Low-power circuit switching
- Signal amplification
- Battery management systems
Procurement Notes
Verify the specific suffix L6327 against official Infineon documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure compatibility with standard SMT assembly processes for the SOT-23-3 footprint. Cross-reference the full part number including HTSA1 designation for accurate RoHS compliance and automotive qualification status if required by the design specification.
Selection Notes
Select this component when a single N-channel MOSFET with 20V rating and 2.5A current capacity is needed in a small SOT-23-3 package. Consider the 0.09 ohm Rds(on) for power loss calculations in low-voltage applications. Verify that the 20V Vds rating exceeds the maximum circuit voltage with adequate margin. Check thermal dissipation capabilities relative to the PCB copper area available for heat spreading.
Part Context
This part belongs to Infineon's BSS205 series of N-channel enhancement mode field effect transistors. These devices are engineered for general-purpose switching and amplification tasks where low input charge and fast switching speeds are beneficial. The series typically offers high reliability and consistent performance across industrial and consumer electronics applications requiring compact transistor solutions.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the 20V Vds, 2.5A Id, and SOT-23-3 package constraints. Verify pinout compatibility and electrical parameter tolerances before implementation.
