BSS214NW L6327

Description：MOSFET N-CH 20V 1.5A SOT323-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:621c5eb99a28 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 1.5A SOT323-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT323
Package / Case：SC-70, SOT-323

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BSS214NW L6327

Overview

The BSS214NW is an N-channel enhancement mode small-signal MOSFET from Infineon Technologies, utilizing OptiMOS™ 2 technology. It operates with a drain-source voltage of 20 V and supports a continuous drain current of 1.5 A at 25 °C. The device features a maximum on-state resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V. It is qualified to AEC-Q101 standards for automotive applications and housed in a PG-SOT323 surface-mount package.

Feature Summary

OptiMOS™ 2 technology providing super logic level operation rated for 2.5 V gate drive
Avalanche rated capability for robust energy handling
Qualified according to AEC-Q101 automotive standards
Lead-free, RoHS compliant, and halogen-free construction

Applications

Automotive electronic systems requiring AEC-Q101 qualification
Small-signal switching applications
Logic level interface circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel quantities. Ensure the component meets required environmental specifications including lead-free and halogen-free compliance. Confirm that the PG-SOT323 package footprint aligns with the target PCB design constraints before finalizing procurement.

Selection Notes

Select this component when a low-voltage N-channel MOSFET with automotive reliability is required. The 2.5 V logic level rating makes it suitable for direct interfacing with low-voltage control signals. Consider the thermal resistance and power dissipation limits relative to the ambient operating temperature range of -55 °C to 150 °C.

Part Context

This part belongs to the BSS214 series of small-signal transistors manufactured by Infineon Technologies. The series utilizes OptiMOS™ 2 technology to deliver high performance in compact packages. The BSS214NW specifically denotes the version packaged in the PG-SOT323 form factor.