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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：3.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：346 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS215PH6327XTSA1 is a P-channel OptiMOS™ P2 small-signal transistor manufactured by Infineon Technologies. It operates in enhancement mode and features a -20 V drain-source breakdown voltage with a continuous drain current of -1.5 A at 25 °C. The device exhibits a maximum on-state resistance of 150 mΩ at VGS = -4.5 V and 280 mΩ at VGS = -2.5 V. It includes avalanche rating capabilities, supporting an avalanche energy of 11 mJ. The component is housed in a PG-SOT23-3 package and complies with RoHS standards.
Feature Summary
- Super Logic Level capability rated for 2.5 V gate drive
- Avalanche rated for robust transient handling
- Qualified according to AEC-Q101 automotive standards
Applications
- Automotive electronic systems requiring AEC-Q101 compliance
- Low-side switching applications utilizing logic-level control
- Power management circuits within compact surface-mount designs
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details such as tape and reel specifications. Ensure that the procurement channel provides valid traceability for automotive-grade components. Cross-reference the datasheet revision to match the required electrical characteristics and thermal performance parameters for your design.
Selection Notes
Select this component when a P-channel MOSFET with low gate threshold voltage is required for direct logic interface. The OptiMOS P2 technology offers optimized on-resistance for efficient power switching. Consider the thermal resistance and power dissipation limits relative to the ambient temperature conditions of the target application environment.
Part Context
This part belongs to the BSS215P series of OptiMOS™ P2 transistors. These devices are designed for high-efficiency switching in space-constrained applications. The series utilizes silicon technology to provide reliable performance across a wide operating temperature range from -55 °C to +150 °C.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying dynamic characteristics and package dimensions.
