BSS225

Description：MOSFET N-CH 600V 90MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:bd1385b84406 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 90MA SOT89
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：131 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT89
Package / Case：TO-243AA

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BSS225

Overview

The BSS225 is a SIPMOS small-signal N-channel enhancement mode MOSFET rated for 600 V drain-source voltage and housed in a SOT-89 package. It supports a continuous drain current of 0.09 A at 25 °C and a maximum power dissipation of 1 W. The device features a logic-level gate threshold voltage ranging from 1.3 V to 2.3 V, with a maximum on-state resistance of 45 Ω at 10 V gate drive. It includes an integrated reverse diode capable of handling pulsed currents up to 0.36 A.

Feature Summary

Logic level operation enabling direct interface with standard digital logic circuits
High dv/dt rating of 6 kV/µs suitable for fast switching applications
Qualified according to AEC-Q101 standards for automotive reliability

Applications

Automotive electronic systems requiring high-voltage small-signal switching
Industrial control circuits utilizing logic-level inputs
Consumer electronics featuring high-side or low-side switching requirements

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging configurations such as tape and reel quantities. Ensure that application environments include protective lacquer if external contamination is present, as specified values are valid only for zero-hour lifetime without such protection.

Selection Notes

Select this component when a 600 V breakdown voltage is required within a compact SOT-89 footprint. Consider the 45 Ω maximum on-resistance and 0.09 A continuous current limits during circuit design. Verify thermal management capabilities based on the 125 K/W junction-to-ambient thermal resistance under minimal footprint conditions.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor portfolio, designed for general-purpose switching tasks. It utilizes N-channel enhancement mode technology optimized for low gate charge characteristics. The device integrates a body diode for inductive load commutation and is engineered for robust performance across industrial and automotive temperature ranges.