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Product Detailed Parameters
- Description：MOSFET N-CH 600V 90MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 90mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：131 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS225H6327FTSA1 is an n-channel enhancement mode SIPMOS small-signal transistor in a SOT89 surface-mount package. It features a drain-source breakdown voltage of 600 V and continuous drain current of 0.09 A at 25 °C. The device has a maximum on-state resistance of 45 Ω, gate threshold voltage ranging from 1.3 V to 2.3 V, and total gate charge up to 5.8 nC. It supports a power dissipation of 1 W, operates between -55 °C and 150 °C, and includes dv/dt rating of 6 kV/µs.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Logic level gate drive capability
- High dv/dt rated reverse diode performance
Applications
- Automotive electronic circuits
- Small-signal switching applications
- Logic-level controlled power stages
Procurement Notes
Verify the specific ordering suffix H6327 against official Infineon documentation to confirm packaging details and reel quantities. Ensure that the component meets the required AEC-Q101 qualification standards for your intended application environment. Cross-reference the datasheet revision with the manufacturing date code to ensure compatibility with your design specifications.
Selection Notes
Select this component when a high-voltage n-channel MOSFET with logic-level input is required in a compact SOT89 package. Consider its low continuous current rating and relatively high on-resistance for small-signal or low-power switching tasks. Verify thermal management requirements given the 1 W power dissipation limit and junction-to-ambient thermal resistance.
Part Context
This part belongs to Infineon's SIPMOS small-signal transistor series, designed for robust performance in demanding environments. The BSS225 variant specifically targets high-voltage applications requiring reliable switching characteristics within a standard surface-mount footprint suitable for automated assembly processes.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. No direct public substitute part numbers are confirmed in the provided source material.
