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Product Detailed Parameters
- Description：MOSFET N-CH 600V 90MA SOT89
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 90mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：131 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS225H6327XTSA1 is an n-channel enhancement mode SIPMOS small-signal transistor in a SOT-89 package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 0.09 A at 25 °C. The device has a maximum on-state resistance of 45 Ω and a power dissipation rating of 1 W. It operates within a temperature range of -55 °C to 150 °C and includes a reverse diode with a forward voltage of 1.2 V.
Feature Summary
- Qualified according to AEC-Q101 for automotive applications
- dv/dt rated capability for high-speed switching environments
- Logic level gate drive compatibility
- Halogen-free construction compliant with IEC61249-2-21
Applications
- Automotive electronic control units
- High-voltage switching circuits
- Small-signal amplification stages
- Power management modules
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and marking details. Ensure that application environments include protective lacquer if external creeping currents are a concern, as specified in the datasheet notes regarding package contamination.
Selection Notes
Select this component when a robust n-channel MOSFET with high breakdown voltage is required in a compact surface-mount form factor. Consider the thermal resistance of 125 K/W and the low continuous current limit of 0.09 A for appropriate heat dissipation planning. Verify that the logic-level gate threshold aligns with the driving circuit's output voltage capabilities.
Part Context
This part belongs to Infineon's SIPMOS series of small-signal transistors. It utilizes silicon technology optimized for high-voltage performance in small packages. The device integrates standard N-channel enhancement mode characteristics with automotive qualification standards, distinguishing it from general-purpose industrial counterparts.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying dynamic parameters and package dimensions.
