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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2A SOT23
- Series：-
- Mfr：EVVO
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS308PE is a P-channel enhancement mode MOSFET from Infineon's OptiMOS P3 family, housed in a PG-SOT-23 package. It features a drain-source voltage of -30 V and a continuous drain current of -2 A at 25°C. The device exhibits a maximum on-resistance of 80 mΩ at VGS = -10 V and 130 mΩ at VGS = -4.5 V. Key electrical parameters include a gate charge of -5 nC (typical @ 10V), input capacitance of 376 pF, and output capacitance of 196 pF. It operates within a temperature range of -55°C to +150°C with a power dissipation of 0.5 W.
Feature Summary
- Logic level operation rated for 4.5 V gate drive
- Integrated electrostatic discharge protection
- Qualified according to automotive standards
Applications
- Battery management systems
- Home appliances
- Small signal switching circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact packaging and reel specifications. Ensure the component meets required automotive qualification standards if used in regulated environments. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component for low-side switching applications requiring logic-level compatibility. The small-signal form factor suits space-constrained designs. Verify thermal constraints relative to the specified power dissipation limit during high-current operation cycles.
Part Context
This part belongs to the BSS308 series of small-signal transistors manufactured by Infineon Technologies. The OptiMOS P3 technology provides optimized performance for general-purpose switching tasks. The PG-SOT-23 package facilitates surface-mount assembly in compact electronic devices.
Replacement Considerations
Check for compatible P-channel MOSFETs with similar voltage ratings and package types. Verify that substitute components meet the same logic level requirements and thermal characteristics.
