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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2A SOT23
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The UMW BSS308PE is a P-channel enhancement mode MOSFET housed in an SOT-23 package. It features a drain-source voltage rating of -30V and supports a continuous drain current of -2.0A at 25°C, with a pulsed current capability of -8.0A. The device exhibits a maximum on-state resistance of 80mΩ at VGS=-10V and 130mΩ at VGS=-4.5V. Key dynamic parameters include an input capacitance of 376pF and a total gate charge of -5.0nC. Thermal performance includes a junction-to-ambient thermal resistance of 250K/W.
Feature Summary
- Logic level operation rated for 4.5V gate drive
- Integrated ESD protection compliant with JESD22-A114 HBM Class 2 standards
- High reverse diode dv/dt rating of 6kV/µs
Applications
- Low-side load switching circuits
- Relay driver applications
- General-purpose power management
Procurement Notes
Verify the specific ordering code suffix to confirm packaging configuration, as standard delivery utilizes tape and reel formats. Confirm that the component meets required environmental specifications, including the specified operating temperature range of -55°C to 150°C. Ensure compatibility with surface mount assembly processes by checking soldering temperature limits against manufacturing equipment capabilities.
Selection Notes
Select this component for applications requiring compact SOT-23 packaging with moderate current handling capabilities up to 2A. Evaluate the logic-level threshold characteristics if direct interfacing with low-voltage control signals is necessary. Consider the thermal resistance constraints when designing PCB layouts to ensure adequate heat dissipation under continuous load conditions.
Part Context
This part belongs to the category of small-signal P-channel MOSFETs designed for general-purpose switching tasks. It serves as a compact alternative to larger packages while maintaining robust electrical ratings suitable for consumer electronics and industrial control systems where space efficiency is prioritized alongside reliable switching performance.
Replacement Considerations
Cross-reference pinout configurations and thermal resistance values when substituting similar P-channel devices. Verify that replacement components meet or exceed the -30V breakdown voltage and -2.0A continuous current requirements to maintain circuit integrity.
