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Product Detailed Parameters
- Description：MOSFET N-CH 30V 1.4A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id：2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：94 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS316NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ 2 series, housed in a SOT-23 package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 1.4 A at 25 °C. The device has a maximum on-state resistance of 160 mΩ at VGS=10 V and 280 mΩ at VGS=4.5 V. It supports avalanche energy ratings and operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Avalanche rated for robust operation under transient conditions
- Logic level compatible with 4.5 V gate drive requirements
- Qualified according to automotive reliability standards
Applications
- High-side switching applications
- Low-side switching applications
- Power management circuits
Procurement Notes
Verify the component against official Infineon documentation to confirm authenticity and revision status. Ensure that the specific ordering suffix matches the required packaging configuration. Cross-reference the datasheet parameters with your circuit design requirements before finalizing procurement decisions.
Selection Notes
Select this component when a small-signal N-channel MOSFET with low on-resistance and logic-level compatibility is required. Consider its thermal characteristics and power dissipation limits relative to the intended operating environment. Evaluate the package size constraints and ensure the lead-free and halogen-free specifications align with project compliance needs.
Part Context
This part belongs to the BSS316N family of OptiMOS™ 2 small-signal transistors manufactured by Infineon Technologies. These devices are designed for efficient switching in compact electronic designs, offering a balance of performance and reliability suitable for various consumer and industrial electronics applications.
Replacement Considerations
Consult official Infineon resources for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.
