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Product Detailed Parameters
- Description：MOSFET N-CH 30V 1.4A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id：2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：94 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS316NL6327HTSA1 is a single N-channel silicon MOSFET from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 1.4A at 25°C. The device exhibits a maximum on-resistance of 119 milliohms and a gate threshold voltage of 1.2V. Electrical performance includes a gate charge of 600 picocoulombs, with rise and fall times of 2.3 nanoseconds and 1 nanosecond respectively. It operates within a temperature range of -55°C to +150°C and dissipates up to 500mW of power.
Feature Summary
- Single N-channel enhancement mode field-effect transistor configuration
- Automotive qualified under AEC-Q100 standards for reliability
- Silicon-based metal-oxide semiconductor technology construction
Applications
- Low-side switching applications in automotive electronics
- General-purpose signal switching circuits
- Power management modules requiring compact packaging
Procurement Notes
Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm reel quantity and tape-and-reel specifications. Ensure the component matches the required AEC-Q100 qualification level for your target application environment. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a 30V rated N-channel MOSFET is required in an SOT-23-3 footprint. The low on-resistance supports efficient current handling for 1.4A loads. Consider the thermal dissipation limits and operating temperature range relative to your circuit design constraints and ambient conditions.
Part Context
This part belongs to the BSS316 series of small-signal MOSFETs manufactured by Infineon Technologies. The series provides solutions for general-purpose switching tasks where space efficiency and automotive-grade reliability are prioritized. The L6327 designation typically indicates specific packaging or lot coding attributes defined by the manufacturer.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic cross-references may not match the AEC-Q100 qualification or exact electrical parameters.
