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BSS64E6327 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 80V 0.8A SOT-23. Review the specifications below when checking this part for your BOM.
The BSS64E6327 is a single NPN bipolar junction transistor manufactured by Infineon Technologies using silicon technology. It is designed for surface mount applications in the SOT-23 package. The device supports a collector-emitter maximum voltage of 80 V and a continuous collector current of 800 mA. It operates at frequencies up to 100 MHz with a power dissipation rating of 330 mW.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific suffix E6327 matches the required packaging format. Check datasheet revisions for any updates to electrical characteristics or thermal limits before finalizing integration into production designs.
Select this component when an NPN transistor with 80 V blocking capability and 800 mA current capacity is required in a small surface mount footprint. Ensure the application frequency remains within the 100 MHz limit. Compare against alternative packages if higher thermal dissipation or different pin configurations are necessary for the specific board layout constraints.
This part belongs to Infineon's general-purpose discrete bipolar transistor portfolio. It serves as a standard switching and amplification element for consumer electronics and industrial control systems where space efficiency and reliable voltage handling are prioritized over high-frequency RF performance.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for equivalent NPN devices with matching voltage, current, and package specifications.
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