Single Bipolar Transistors BSS64E6327 product image

BSS64E6327

$0.03
  • Description:TRANS NPN 80V 0.8A SOT-23
  • Series:-

SKU:d042271433e1 Category: Brand:

  
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BSS64E6327 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 80V 0.8A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BSS64E6327

  • Description:TRANS NPN 80V 0.8A SOT-23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 400µA, 4mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4mA, 1V
  • Power - Max:330 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BSS64E6327

BSS64E6327

Single Bipolar Transistors Overview

The BSS64E6327 is a single NPN bipolar junction transistor manufactured by Infineon Technologies using silicon technology. It is designed for surface mount applications in the SOT-23 package. The device supports a collector-emitter maximum voltage of 80 V and a continuous collector current of 800 mA. It operates at frequencies up to 100 MHz with a power dissipation rating of 330 mW.

Single Bipolar Transistors Feature Summary

  • NPN silicon bipolar junction transistor configuration
  • High voltage capability of 80 V collector-emitter rating
  • Surface mount design in compact SOT-23 package

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Amplifier stages requiring moderate voltage handling
  • Embedded control logic interfaces

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific suffix E6327 matches the required packaging format. Check datasheet revisions for any updates to electrical characteristics or thermal limits before finalizing integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V blocking capability and 800 mA current capacity is required in a small surface mount footprint. Ensure the application frequency remains within the 100 MHz limit. Compare against alternative packages if higher thermal dissipation or different pin configurations are necessary for the specific board layout constraints.

Single Bipolar Transistors Part Context

This part belongs to Infineon's general-purpose discrete bipolar transistor portfolio. It serves as a standard switching and amplification element for consumer electronics and industrial control systems where space efficiency and reliable voltage handling are prioritized over high-frequency RF performance.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for equivalent NPN devices with matching voltage, current, and package specifications.

BSS64E6327BSS64E6327
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