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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS7728NH6327XTSA2 is a single N-channel enhancement mode small-signal MOSFET from Infineon Technologies, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.2 A at 25°C. The device exhibits a maximum on-state resistance of 5 Ω at VGS=10V and 7.5 Ω at VGS=4.5V. It supports a pulsed drain current of 0.8 A and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Logic level gate drive capability for direct interfacing with standard logic circuits
- High dv/dt rating suitable for fast switching applications
- Qualified according to automotive reliability standards
Applications
- Motor control systems
- Power management circuits
- Load switching applications
Procurement Notes
Verify the specific ordering suffix H6327 confirms the 3000-piece tape and reel packaging configuration. Ensure the component meets RoHS compliance and halogen-free requirements as specified by IEC61249-2-21 standards before finalizing procurement specifications.
Selection Notes
Select this component when a compact N-channel switch with 60V blocking capability is required. Consider the 5Ω on-resistance for low-current applications where minimal voltage drop is not critical. Verify that the logic-level threshold aligns with the available gate drive voltage levels in the target design.
Part Context
This part belongs to the SIPMOS small-signal transistor family, designed for general-purpose switching tasks. It utilizes silicon technology and is optimized for surface-mount assembly. The device integrates robust protection against electrostatic discharge and offers high thermal stability for reliable operation in diverse environments.
Replacement Considerations
Direct substitutes must match the 60V VDS, SOT-23-3 footprint, and N-channel enhancement mode characteristics. Verify equivalent RDS(on) limits and thermal resistance values to ensure performance parity without redesigning the PCB layout or gate drive circuitry.
