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The BSS806NEH6327XTSA1 is an N-channel OptiMOS™2 small-signal transistor in a PG-SOT23 package. It features ultra logic level operation rated for 1.8V gate-source voltage. Key electrical parameters include a drain-source breakdown voltage of 20V, continuous drain current of 2.3A at 25°C, and pulsed drain current of 9.3A. The device exhibits a maximum on-state resistance of 82mΩ at VGS=1.8V and 57mΩ at VGS=2.5V. It supports avalanche energy of 10.8mJ and reverse diode dv/dt of 6kV/µs. Operating temperature ranges from -55°C to 150°C.
Verify the complete ordering code BSS806NEH6327XTSA1 matches the required SOT23 package and reel quantity specifications. Confirm that the H6327 marking corresponds to the specific manufacturing batch and halogen-free compliance status. Ensure the component meets the required RoHS and IEC61249-2-21 standards for your assembly process. Cross-reference the datasheet revision 2.01 for accurate thermal and electrical limits during integration.
Select this component when a small-signal N-channel MOSFET with 1.8V logic threshold is required. The PG-SOT23 package suits space-constrained PCB layouts. Consider the 20V breakdown voltage and 2.3A continuous current rating for appropriate load handling. Evaluate the thermal resistance characteristics relative to your ambient temperature conditions and PCB copper area availability for heat dissipation.
This part belongs to Infineon's OptiMOS™2 family of small-signal transistors. The family focuses on low gate charge and fast switching performance. The BSS806NE variant specifically targets ultra-low voltage logic interfaces. It utilizes standard surface-mount technology suitable for automated pick-and-place assembly processes in high-volume manufacturing environments.
No public confirmed substitute part numbers are documented in the source material.