ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 20V 1.4A SOT323-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
- Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 2.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
Download product information
Overview
The BSS816NW L6327 is an N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes Si technology and is housed in a SOT-323-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 20 V, a continuous drain current of 1.4 A, and a maximum on-resistance of 107 mOhms at Vgs=10V. The gate-source voltage range is -8 V to +8 V, with a typical threshold voltage of 550 mV. Gate charge is specified at 600 pC. The device supports operation from -55°C to +150°C, features a power dissipation of 500 mW, and includes avalanche rating capability.
Feature Summary
- Ultra logic level operation rated for 1.8V gate drive
- Avalanche rated for robustness against transient energy
- Qualified according to AEC-Q101 automotive standards
Applications
- Automotive load switching applications
- Low-side switching in battery-powered devices
- General purpose small-signal transistor circuits
Procurement Notes
Verify the specific suffix L6327 against official Infineon documentation to confirm reel packaging details and marking codes. Ensure compatibility with SOT-323-3 footprint requirements during PCB design. Confirm RoHS compliance status through the manufacturer's latest declaration. Cross-reference datasheet revisions to ensure parameter consistency with current production batches.
Selection Notes
Select this component for applications requiring low gate charge and fast switching speeds within a compact SOT-323-3 package. The 20V rating suits low-voltage systems, while the 1.4A current capacity supports moderate load requirements. Consider the 107 mOhm on-resistance for efficiency calculations in power-sensitive designs. Verify thermal management needs given the 500 mW power dissipation limit in the small outline package.
Part Context
This part belongs to the BSS816 series of OptiMOS2 small-signal transistors. These components are designed for high-frequency switching and compact designs. The series offers low negative turn-off voltage and a wide operating temperature range, reducing design complexity for automotive and industrial applications requiring reliable N-channel enhancement mode performance.
Replacement Considerations
Check for direct pin-compatible alternatives within the same BSS816 family or other SOT-323-3 N-channel MOSFETs with matching 20V/1.4A ratings. Verify that substitute parts meet the same AEC-Q101 qualification if automotive reliability is required. Ensure on-resistance and gate charge specifications remain comparable to maintain circuit timing and efficiency.
