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Product Detailed Parameters
- Description：MOSFET P-CH 60V 330MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 330mA, 10V
- Vgs(th) (Max) @ Id：2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：3.57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS83PE6327 is a P-channel enhancement mode MOSFET from Infineon Technologies, part of the SIPMOS series. It features a 60V drain-source voltage and a continuous drain current of 330mA at 25°C. The device operates within a temperature range of -55°C to 150°C junction temperature. Key electrical parameters include a maximum on-resistance of 2 ohms at 10V gate drive and a typical gate charge of 2.38nC. It is housed in a PG-SOT23 (SOT-23-3) surface-mount package.
Feature Summary
- P-channel enhancement mode operation for low-side switching applications
- Automotive grade qualification compliant with AEC-Q101 standards
- Small signal design optimized for compact PCB layouts
Applications
- Low-side switching in automotive electronic modules
- General purpose power management circuits
- Signal path control in consumer electronics
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot codes and date codes against current production status as discontinuation notices may apply. Request official datasheets and test reports to ensure compliance with specified electrical limits and packaging requirements before integration into final assemblies.
Selection Notes
Select this component for applications requiring reliable P-channel switching with moderate current handling capabilities. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified on-resistance. Consider thermal management strategies given the power dissipation limits in the SOT-23 package. Verify that the 60V rating exceeds the maximum circuit voltage under all operating conditions.
Part Context
This part belongs to the BSS83 family of small signal MOSFETs designed by Infineon Technologies. The family offers various voltage and current ratings packaged in standard surface-mount formats. The BSS83PE6327 specifically targets automotive and industrial markets requiring robust performance in space-constrained environments.
Replacement Considerations
Check for updated suffixes such as HTSA1 which may indicate specific tape and reel configurations or enhanced automotive qualifications. Verify pin compatibility and electrical equivalence with alternative P-channel MOSFETs if sourcing from different manufacturers.
