BSS83PH6327XTSA1

$0.35

Description：MOSFET P-CH 60V 330MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3abc1e3924ce Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 330MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id：2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs：3.57 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS83PH6327XTSA1

Overview

The BSS83PH6327XTSA1 is a P-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PG-SOT23 (SOT-23-3) surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 330 mA at 25°C. Key electrical parameters include a maximum on-resistance of 2 Ohms at 10 V gate drive, a gate charge of 3.57 nC at 10 V, and an input capacitance of 78 pF at 25 V. It operates within a temperature range of -55°C to 150°C junction temperature and holds AEC-Q101 automotive qualification.

Feature Summary

Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle electronics.
P-channel configuration designed for efficient high-side switching applications in power management circuits.
Compact SOT-23-3 packaging facilitates space-constrained surface-mount assembly.

Applications

Automotive load switching
Power management units
General-purpose switching

Procurement Notes

Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit semiconductor devices. Confirm that the specific ordering suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and material content declarations prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring a small-form-factor P-channel switch with automotive certification. Evaluate thermal dissipation requirements against the 360 mW power rating. Compare on-resistance characteristics with alternative logic-level devices if lower conduction losses are critical for the specific application efficiency targets.

Part Context

This part belongs to the BSS83 series of single N- and P-channel MOSFETs from Infineon Technologies. The series is engineered for general-purpose switching applications, offering a balance of low on-resistance and fast switching speeds within compact surface-mount packages suitable for consumer and industrial electronics.