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Product Detailed Parameters
- Description：50V 130MA 300MW 10R@5V,100MA 2V@
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The UMW BSS84 is a P-Channel Enhancement Mode MOSFET housed in an SOT-23 package. It features a drain-source voltage of -50V and a continuous drain current of -130mA at 25°C. The device exhibits a maximum on-resistance of 10Ω at VGS = -5V and ID = -100mA. Total power dissipation is rated at 300mW, with a thermal resistance from junction to ambient of 417℃/W. Operating and storage temperatures range from -55℃ to +150℃.
Feature Summary
- P-Channel enhancement mode construction for efficient switching applications
- Low static drain-source on-resistance optimized for low-loss conduction
- High breakdown voltage capability suitable for general-purpose switching
Applications
- General-purpose switching circuits
- Load switch applications
- Battery protection modules
Procurement Notes
Verify the specific manufacturer marking code against official datasheets to confirm authenticity. Ensure the component matches the required SOT-23 pinout configuration: Gate, Source, Drain. Confirm that the operating environment remains within the specified temperature range of -55℃ to +150℃ to maintain performance reliability.
Selection Notes
Select this component when a small signal P-Channel MOSFET is required for low-current switching tasks. The SOT-23 package offers space efficiency for compact designs. Consider the 10Ω on-resistance limit when designing for minimal voltage drop under load conditions up to 100mA.
Part Context
This component belongs to the family of small-signal metal-oxide-semiconductor field-effect transistors designed for surface-mount technology. It serves as a standard solution for replacing older discrete transistor configurations in modern electronic circuitry requiring compact form factors and reliable switching characteristics.
Replacement Considerations
Check pin compatibility and electrical ratings before substituting. Verify that alternative parts meet or exceed the -50V drain-source voltage and -130mA current requirements.
