BSS84

BSS84

$0.14
  • Description:P-CHANNEL ENHANCEMENT MODE MOSFE
  • Series:-
  • Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0cca0dcfa597 Category: Brand:

  
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Product Detailed Parameters

  • Description:P-CHANNEL ENHANCEMENT MODE MOSFE
  • Series:-
  • Mfr:ANBON SEMICONDUCTOR (INT'L) LIMITED
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):225mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS84

Overview

The BSS84 is a P-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED, housed in a miniature SOT-23 surface-mount package. It features a drain-source voltage rating of -50 V and a continuous drain current of -0.13 A at 25°C. The device offers a low gate threshold voltage ranging from 0.9 V to 2 V and a maximum static drain-source on-resistance of 10 Ω at VGS = -5 V. With a power dissipation capacity of 225 mW and ESD protection up to 2 kV (HBM), it supports junction temperatures up to 150°C.

Feature Summary

  • Energy-efficient design with low threshold voltage for effective logic-level control
  • High-speed switching capability suitable for rapid signal processing applications
  • Miniature SOT-23 surface mount package optimized for board space conservation
  • Integrated electrostatic discharge protection rated up to 2 kV (HBM)

Applications

  • General regulation and voltage reference circuits
  • Over-voltage protection modules
  • High-density circuit designs requiring compact footprints

Procurement Notes

Verify the specific manufacturer designation when sourcing, as the BSS84 part number is utilized by multiple semiconductor producers including ANBON SEMICONDUCTOR (INT'L) LIMITED and Nexperia. Confirm that the received component matches the SOT-23 outline and pin configuration (Gate, Source, Drain) specified in the official datasheet. Ensure compliance with RoHS standards and check for any automotive qualification requirements if the application demands AEC-Q101 certification.

Selection Notes

Select this component for applications requiring a small-form-factor P-Channel MOSFET with moderate voltage handling capabilities. The device is appropriate for low-current switching tasks where a maximum continuous drain current of 0.13 A is sufficient. Consider the thermal characteristics, specifically the junction-to-ambient resistance, when designing heat dissipation strategies for enclosed environments or high ambient temperature conditions.

Part Context

This component belongs to the family of single-channel enhancement mode MOSFETs designed for general-purpose switching and amplification. It utilizes silicon technology to provide reliable performance in consumer electronics and industrial control systems. The SOT-23 packaging standardizes its integration into automated surface-mount assembly lines, ensuring compatibility with existing PCB layouts and manufacturing processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BSS84BSS84
$0.14
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