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The BSS84 is a P-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED, housed in a miniature SOT-23 surface-mount package. It features a drain-source voltage rating of -50 V and a continuous drain current of -0.13 A at 25°C. The device offers a low gate threshold voltage ranging from 0.9 V to 2 V and a maximum static drain-source on-resistance of 10 Ω at VGS = -5 V. With a power dissipation capacity of 225 mW and ESD protection up to 2 kV (HBM), it supports junction temperatures up to 150°C.
Verify the specific manufacturer designation when sourcing, as the BSS84 part number is utilized by multiple semiconductor producers including ANBON SEMICONDUCTOR (INT'L) LIMITED and Nexperia. Confirm that the received component matches the SOT-23 outline and pin configuration (Gate, Source, Drain) specified in the official datasheet. Ensure compliance with RoHS standards and check for any automotive qualification requirements if the application demands AEC-Q101 certification.
Select this component for applications requiring a small-form-factor P-Channel MOSFET with moderate voltage handling capabilities. The device is appropriate for low-current switching tasks where a maximum continuous drain current of 0.13 A is sufficient. Consider the thermal characteristics, specifically the junction-to-ambient resistance, when designing heat dissipation strategies for enclosed environments or high ambient temperature conditions.
This component belongs to the family of single-channel enhancement mode MOSFETs designed for general-purpose switching and amplification. It utilizes silicon technology to provide reliable performance in consumer electronics and industrial control systems. The SOT-23 packaging standardizes its integration into automated surface-mount assembly lines, ensuring compatibility with existing PCB layouts and manufacturing processes.
Public confirmed substitute part numbers are not available in the provided documentation.