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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84-7-F is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of -50 V and a continuous drain current (ID) of -130 mA at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 10 Ω at VGS = -5 V and ID = -100 mA, with a typical value of 3.2 Ω. Gate-source voltage limits are ±20 V. Total power dissipation is rated at 300 mW. Operating temperature ranges from -55°C to +150°C. The component utilizes a standard SOT23 package.
Feature Summary
- Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
- Qualified to JEDEC standards for high reliability.
- Totally lead-free and fully RoHS compliant, containing no intentionally added lead.
- Halogen and antimony free, classified as a green device.
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard SOT23 package in a 3000-unit tape and reel carrier. Confirm that the required electrical characteristics align with the datasheet parameters, particularly the RDS(ON) limits and thermal ratings. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 is documented for the final assembly process.
Selection Notes
Select this component for low-voltage, low-current switching tasks requiring a compact surface-mount footprint. The P-channel configuration simplifies high-side drive requirements compared to N-channel alternatives. Evaluate the thermal resistance and power dissipation capabilities against the expected ambient temperature conditions to ensure safe operation within the specified junction temperature limits.
Part Context
This part belongs to the BSS84 series of P-channel MOSFETs from Diodes Incorporated. It shares core electrical specifications with variants like the BSS84Q-7-F, though the latter holds automotive qualification under AEC-Q101 standards. The standard BSS84 variant focuses on general industrial and consumer electronics applications rather than strict automotive grade requirements.
Replacement Considerations
The BSS84Q-7-F serves as an automotive-compliant alternative offering identical electrical characteristics but with enhanced reliability qualifications. Verify pinout compatibility and package dimensions when substituting with other generic P-channel MOSFETs in the SOT23 form factor.
