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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in SOT23. It features a drain-source voltage of -50V and a continuous drain current of -130mA at +25°C. The static drain-source on-resistance is typically 3.2Ω with a maximum of 10Ω at VGS = -5V. Key electrical parameters include a gate threshold voltage range of -0.8V to -2.0V and input capacitance up to 45pF. The device supports an operating temperature range of -55°C to +150°C and offers fast switching capabilities suitable for power management.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Totally lead-free and fully RoHS compliant, meeting environmental standards for halogen and antimony-free composition.
- Qualified to JEDEC standards for high reliability, ensuring robustness in demanding operational environments.
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packing quantity and reel specifications. Ensure the component matches the required package type and compliance standards for your assembly process. Cross-reference the date code marking key to validate production timing. Confirm that the selected variant aligns with your system's thermal and electrical requirements before finalizing procurement.
Selection Notes
Select this component for low-voltage P-channel switching applications requiring compact SOT23 packaging. Evaluate the -50V breakdown voltage and -130mA current limits against circuit demands. Consider the typical 3.2Ω on-resistance for efficiency calculations. Verify compatibility with gate drive voltages, noting the threshold range. Ensure thermal management strategies account for the specified junction-to-ambient resistance.
Part Context
This part belongs to Diodes Incorporated's BSS84 series of P-channel MOSFETs. The series includes variants such as BSS84Q for automotive compliance. The standard BSS84 is designed for general-purpose use, offering a balance of low on-resistance and fast switching. It serves as a compact solution for small-signal power control in consumer and industrial electronics.
Replacement Considerations
Check for BSS84Q if automotive qualification is required. Verify pinout compatibility with existing SOT23 footprints. Ensure replacement parts meet the same -50V and -130mA ratings. Confirm electrical characteristics match the original design specifications.
FAQ
What is the maximum pulsed drain current for the BSS84?
The maximum pulsed drain current (IDM) is -1.2 A.
Is the BSS84 qualified for automotive applications?
The standard BSS84 is not explicitly stated as automotive-compliant in this datasheet; however, an automotive-compliant version is available under the separate part number BSS84Q.
