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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BSS84-F169 is a P-channel enhancement mode MOSFET manufactured by onsemi, belonging to the BSS84 series. It features a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA. The device utilizes an SOT-23 surface-mount package with three pins. Key electrical parameters include a maximum drain-source resistance of 10 Ω, a typical gate charge of 0.9 nC at specified voltages, and a maximum power dissipation of 250 mW. It operates within a temperature range from -65°C to +150°C.
Feature Summary
- P-channel enhancement mode vertical DMOS transistor design
- Logic level compatible for direct interface to CMOS circuits
- High-speed switching capability with low threshold voltage
- Robust construction ensuring reliable performance in small signal applications
Applications
- Low voltage and low current switching applications
- Power management circuits
- Portable equipment and consumer electronics
- Industrial control systems
Procurement Notes
Verify the specific suffix F169 against official onsemi documentation to confirm tape and reel specifications or packaging variations. Ensure the component matches the standard BSS84 electrical characteristics defined in the datasheet. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and availability status before procurement.
Selection Notes
Select this component for designs requiring a compact P-channel switch with logic-level compatibility. The SOT-23 package suits space-constrained PCB layouts. Verify that the 50 V rating and 130 mA current capacity meet the circuit requirements. Consider the thermal dissipation limits when designing for high ambient temperatures or continuous operation.
Part Context
The BSS84 is a widely used small-signal MOSFET originally developed by Fairchild Semiconductor and now produced by onsemi. It serves as a standard solution for low-power switching tasks. The device is characterized by its low on-resistance and fast switching speeds, making it suitable for battery-powered devices and general-purpose signal switching in modern electronic systems.
Replacement Considerations
Check for cross-references such as NXP BSS84 or equivalent P-channel MOSFETs in SOT-23 packages. Ensure substitute parts match the 50 V rating, 130 mA current, and pinout configuration. Verify that alternative components offer comparable gate threshold voltages and on-resistance values for circuit compatibility.
