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The onsemi BSS84-G is a P-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA at 25°C. The device exhibits a typical gate charge of 0.9 nC and a maximum on-resistance of 10 Ω. Power dissipation is rated at 250 mW, with an operating temperature range spanning from -65°C to 150°C.
Verify the specific suffix 'G' against the official onsemi datasheet to confirm it denotes RoHS compliance or specific tape-and-reel packaging rather than a functional deviation. Ensure the ordering part number matches the exact electrical specifications required for the target application design.
Select this component for designs requiring a small-signal P-channel switch within a SOT-23 footprint. The 50 V rating and 130 mA current capability suit low-power logic-level control tasks. Verify that the 10 Ω on-resistance meets the voltage drop requirements of the specific load being driven.
This component belongs to the BSS84 series of single P-channel MOSFETs manufactured by onsemi. These devices are standard small-signal transistors designed for general-purpose switching. The series provides a reliable solution for space-constrained electronics requiring efficient low-current control.
Direct substitutes include the BVSS84L and SBSS84LT1 from onsemi. Other manufacturers offer pin-compatible alternatives such as the BSS84 from UMW or the BSS84XHZG from ROHM, provided their electrical ratings align with the original design constraints.