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Product Detailed Parameters
- Description：-60, -0.15, SINGLE P-CHANNEL
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 150mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：37 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：357mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84 RFG is a P-Channel Power MOSFET manufactured by Taiwan Semiconductor in an SOT-23 package. It features a drain-source voltage of -60V and a continuous drain current of -150mA at 25°C. The device exhibits a maximum on-resistance of 8Ω at VGS=-10V and 10Ω at VGS=-4.5V. Total gate charge is specified at 1.9nC under standard test conditions. Thermal resistance from junction to ambient is 350°C/W, with total power dissipation rated at 357mW at 25°C. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Logic level operation for direct interface with digital control signals
- Low gate charge characteristics enabling fast power switching performance
- RoHS compliant manufacturing process ensuring environmental safety standards
Applications
- Low side load switching circuits
- Level shift applications
- General purpose switching circuits
Procurement Notes
Verify the specific ordering code BSS84 RFG against official Taiwan Semiconductor documentation to confirm the SOT-23 packaging and reel quantity specifications. Ensure that the application environment remains within the absolute maximum ratings for drain-source voltage and continuous current limits. Confirm compliance requirements such as RoHS status prior to final integration into the design.
Selection Notes
Select this component when a compact P-Channel MOSFET is required for low-voltage logic-level switching applications. The SOT-23 form factor suits space-constrained designs. Evaluate thermal management needs based on the 350°C/W junction-to-ambient resistance rating. Verify that the required gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.
Part Context
This part belongs to the BSS84 series of single P-Channel enhancement mode MOSFETs. It utilizes silicon technology optimized for general-purpose switching tasks. The device integrates a body diode for inductive load handling. It is designed for surface-mount assembly processes compatible with standard SMD/SMT production lines.
Replacement Considerations
Cross-reference with other manufacturers offering identical pinouts and electrical parameters. Verify that substitute components meet the same -60V breakdown voltage and current carrying capabilities. Ensure equivalent thermal resistance values are maintained for reliable operation.
