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The BSS84 is a P-channel enhancement-mode MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It operates with a drain-source voltage of -50V and a continuous drain current of -130mA in an SOT-23 package. The device features a maximum static drain-source on-state resistance of 10Ω at VGS = -5V and ID = -100mA. Thermal characteristics include a total device dissipation of 200mW at 25°C, derating by 1.8mW/°C above this temperature, with a junction-to-ambient thermal resistance of 350°C/W.
Verify the specific manufacturer designation when sourcing, as multiple vendors produce the BSS84 part number. Confirm that the received components match the SOT-23 physical dimensions and electrical specifications outlined in the official datasheet. Ensure compliance with RoHS requirements if applicable to your manufacturing process. Cross-reference ordering information directly with authorized distributors to guarantee component authenticity and traceability.
Select this component for applications requiring small-signal P-channel switching with moderate voltage ratings. Evaluate the 10Ω on-resistance against your specific load current requirements to ensure acceptable power dissipation. Consider the SOT-23 footprint constraints during PCB layout. Verify that the gate threshold voltage range aligns with your logic drive levels for reliable turn-on and turn-off performance under varying temperature conditions.
This component belongs to the category of small-signal metal-oxide-semiconductor field-effect transistors (MOSFETs). These devices are widely utilized in consumer electronics and industrial control systems where compact size and efficient switching are prioritized over high-power handling capabilities. The BSS84 specifically serves as a standard replacement for similar P-channel devices in legacy designs requiring -50V blocking capability.
Direct substitutes must maintain identical pinout configurations and meet or exceed the -50V drain-source voltage rating. Verify that alternative P-channel MOSFETs offer comparable on-resistance values at equivalent gate drive voltages to ensure consistent circuit performance without redesigning the driving logic.