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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V/50V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：115mA, 130mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：200mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS8402DW-7 is a complementary pair enhancement mode MOSFET in an SOT363 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 60V, continuous drain current of 115mA at +25°C, and maximum on-resistance of 13.5Ω at VGS=10V. Q2 provides a drain-source voltage of -50V, continuous drain current of -130mA at +25°C, and maximum on-resistance of 10Ω at VGS=-5V. The total power dissipation is 200mW with a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary pair configuration integrating N-channel and P-channel enhancement mode MOSFETs
- Optimized for low on-state resistance while maintaining superior switching performance
- Low gate threshold voltage and low input capacitance for efficient drive requirements
- Totally lead-free and fully RoHS compliant construction
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The datasheet lists BSS8402DW-7-F and BSS8402DW-13-F as standard compliance options with 3,000 and 10,000 units per tape and reel respectively. Confirm that the received part matches the required packaging quantity and compliance specifications before integration into production.
Selection Notes
Select this component for designs requiring a matched N-channel and P-channel pair in a compact surface-mount footprint. Ensure the circuit operates within the specified 200mW total power dissipation limit and respects the 60V and -50V breakdown ratings for the respective channels. Verify thermal management strategies are adequate for the intended ambient temperature conditions.
Part Context
This component belongs to Diodes Incorporated's complementary MOSFET family designed for high-efficiency power management. It serves as a dual-transistor solution replacing discrete single FETs to save board space. The SOT363 case material utilizes a molded plastic compound with UL flammability classification rating 94V-0.
Replacement Considerations
Direct substitutes include other complementary pairs in SOT363 packages such as DMC1030UFDB or DMC4015SSD from Diodes Incorporated. Verify pinout compatibility and electrical parameters against the original design requirements before substitution.
