BSS8402DWQ-13

Overview

The BSS8402DWQ-13 is a complementary pair enhancement mode MOSFET in an SOT363 package. It integrates an N-channel Q1 (2N7002 section) and a P-channel Q2 (BSS84 section). The N-channel device offers a drain-source voltage of 60V, continuous current of 115mA at 25°C, and on-resistance of 13.5Ω max at VGS=10V. The P-channel device provides -50V drain-source voltage, -130mA continuous current, and 10Ω max on-resistance at VGS=-5V. Total power dissipation is 200mW with an operating temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single compact package.
• Optimized for low on-state resistance while maintaining superior switching performance.
• Qualified for automotive applications requiring specific change control, including AEC-Q101 certification and PPAP capability.
• Manufactured in IATF 16949 certified facilities using lead-free, halogen-free, and antimony-free materials.

Applications

• General purpose interfacing switches
• Power management functions
• Analog switching circuits

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the 'Q' designation ensures compliance with automotive quality standards, specifically AEC-Q101 qualification and PPAP readiness. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a matched N-channel and P-channel pair is required in a minimal footprint SOT363 case. The device is suitable for high-efficiency power management where low on-resistance and fast switching are critical. Consider the thermal resistance of 625°C/W and the 200mW total power dissipation limit for heat management in the design.

Part Context

This part belongs to the BSS8402DW family manufactured by Diodes Incorporated. It combines standard 2N7002 and BSS84 specifications into a dual MOSFET structure. The 'Q' suffix indicates automotive-grade manufacturing, while the '-13' suffix denotes the specific bulk tape and reel quantity for high-volume production environments.

Replacement Considerations

Standard BSS8402DW variants without the 'Q' suffix may be used if automotive qualification is not required. Verify pinout compatibility within the SOT363 package before substitution.

FAQ

What is the maximum gate-source voltage rating?

The continuous gate-source voltage rating is ±20V for both the N-channel and P-channel sections.

Is this component suitable for high-voltage switching?

No, it is designed for low-voltage applications with ratings of 60V for the N-channel and -50V for the P-channel.

How does the junction temperature affect on-resistance?

On-resistance increases as junction temperature rises; for example, the N-channel RDS(ON) increases from 3.2Ω at 25°C to 4.4Ω at 125°C at VGS=5V.