BSS8402DWQ-7

$0.56

Description：MOSFET N/P-CH 60V/50V SOT363
Series：-

SKU:b0cc995c26e9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V/50V SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V, 50V
Current - Continuous Drain (Id) @ 25°C：115mA, 130mA
Rds On (Max) @ Id, Vgs：13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V, 45pF @ 25V
Power - Max：200mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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BSS8402DWQ-7

Overview

The BSS8402DWQ-7 is an automotive-grade complementary pair enhancement mode MOSFET in a SOT363 package. It integrates an N-channel device (Q1) rated at 60V VDS and a P-channel device (Q2) rated at -50V VDS. The Q1 section features a maximum RDS(ON) of 13.5Ω at VGS=10V with a continuous ID of 115mA. The Q2 section offers a maximum RDS(ON) of 10Ω at VGS=-5V with a continuous ID of -130mA. Total power dissipation is 200mW, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
Complementary N-channel and P-channel enhancement mode configuration
Low on-resistance optimized for high efficiency power management
Totally lead-free and fully RoHS compliant green device

Applications

General purpose interfacing switch
Power management functions
Analog switching circuits

Procurement Notes

Verify the specific ordering suffix to confirm automotive qualification status. The 'Q' suffix indicates AEC-Q101 compliance and IATF 16949 manufacturing origin. Confirm tape and reel quantities match project requirements, as standard and automotive variants share identical electrical specifications but differ in quality control documentation.

Selection Notes

Select this component when dual polarity switching is required in a minimal footprint. The SOT363 package supports low input capacitance for fast switching speeds. Ensure gate drive voltages align with the specified threshold ranges for both N-channel and P-channel sections to maintain optimal on-state resistance performance under varying thermal conditions.

Part Context

This part belongs to Diodes Incorporated's complementary MOSFET family designed for space-constrained designs. It combines two distinct transistors into a single surface-mount package to reduce board area. The Q-series variant specifically targets automotive electronics requiring rigorous change control and reliability standards compared to standard commercial grade parts.

Replacement Considerations

BSS8402DW-7-F: Standard commercial grade equivalent without automotive qualification.

FAQ

What is the difference between BSS8402DWQ-7 and BSS8402DW-7-F?

The BSS8402DWQ-7 is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities for automotive use, while the BSS8402DW-7-F is a standard commercial grade part.