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Product Detailed Parameters
- Description：MOSFET P-CH 50V 180MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta), 1.14W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84AK,215 is a P-channel TrenchMOS power MOSFET manufactured by Nexperia USA Inc. It features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 180 mA at 25°C ambient temperature. The device operates in the TO-236AB (SOT-23-3) surface-mount package with a maximum power dissipation of 350 mW at ambient temperature and 1.14 W at case temperature. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.1 V maximum at 250 µA, an on-resistance (Rds(on)) of 7.5 Ohms at 100 mA and 10 V gate drive, and a gate charge (Qg) of 0.35 nC at 5 V. Input capacitance (Ciss) is 36 pF at 25 V. The component is qualified to AEC-Q101 standards for automotive applications and supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Utilizes TrenchMOS technology for enhanced switching performance and low on-resistance characteristics.
- Automotive-grade qualification compliant with AEC-Q101 standards for reliability in vehicle electronics.
- Logic-level compatible gate drive optimized for efficient control in low-voltage switching applications.
Applications
- Load switching in automotive electronic control units
- Battery protection circuits requiring reverse polarity or overcurrent protection
- Low-side or high-side switching in portable battery-powered devices
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component when a small-footprint P-channel MOSFET is required for low-current switching applications. The TO-236AB package suits space-constrained designs. Ensure the 180 mA continuous current rating meets load requirements. Consider the 7.5 Ohm on-resistance for thermal management in low-power scenarios. Verify compatibility with logic-level gate drivers given the 2.1 V threshold specification.
Part Context
The BSS84AK belongs to Nexperia's BSS84 family of single P-channel MOSFETs. This series is designed for general-purpose switching and load management tasks. The 'AK' variant specifically denotes the automotive-grade version with AEC-Q101 qualification, distinguishing it from standard commercial variants within the same electrical parameter envelope.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Nexperia replacement guides or equivalent manufacturer datasheets for cross-referencing based on pinout and electrical specifications.
