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Product Detailed Parameters
- Description：BSS84AKQB/SOT8015/DFN1110D-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 10 V
- Vgs (Max)：+12V, -20V
- Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：420mW (Ta), 4.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：DFN1110D-3
- Package / Case：3-XDFN Exposed Pad
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Overview
The BSS84AKQBZ is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an ultra-small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device plastic package with dimensions of 1.1 x 1 x 0.48 mm. The device features a maximum drain-source voltage (Vds) of 50 V and a continuous drain current (Id) of 270 mA. Key electrical parameters include a maximum on-resistance (Rds(on)) of 7.5 Ohms at Vgs = -10 V, a gate charge (Qg) of 400 pC, and a power dissipation (Pd) of 960 mW. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Logic-level compatible for efficient drive requirements
- Side wettable flanks facilitate optical solder inspection
- ESD protection exceeding 1 kV HBM (Class H1C)
- AEC-Q101 qualified for automotive reliability
Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Procurement Notes
Verify the specific suffix 'BZ' against official Nexperia documentation to confirm if it denotes a unique packaging or marking variation distinct from the standard BSS84AKQB. Ensure the component meets AEC-Q101 qualification requirements for your target application environment. Cross-reference the DFN1110D-3 package dimensions with your PCB footprint design to ensure mechanical compatibility.
Selection Notes
Select this component when a small form factor is critical due to its DFN1110D-3 leadless package. The 50 V rating and 270 mA current capacity suit low-power switching tasks. The logic-level compatibility allows direct interfacing with standard digital logic outputs. Consider the 7.5 Ohm on-resistance for thermal management in high-duty-cycle applications.
Part Context
This part belongs to the BSS84 series of P-channel MOSFETs from Nexperia. While other variants like BSS84AKW use SC-70 packages and BSS84AK uses TO-236AB, the BSS84AKQBZ specifically employs the DFN1110D-3 package. This series leverages Trench MOSFET technology to achieve improved performance characteristics compared to older planar technologies.
Replacement Considerations
Direct substitutes include BSS84AKQB, which shares identical electrical specifications and the DFN1110D-3 package. Other family members such as BSS84AKW (SC-70) or BSS84AK (TO-236AB) offer similar electrical ratings but require different footprints and are not pin-compatible replacements.
