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The BSS84AKS,115 is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology to achieve high switching efficiency within a compact SOT363 (SC-88) surface-mount package. The device is rated for a maximum drain-source voltage of 50V and supports a continuous drain current of 0.17A. Key electrical parameters include a gate-source threshold voltage of 1.2V at -1mA and a maximum on-resistance of 2.5 ohms at VGS = -4.5V. It operates across a temperature range of -55°C to +150°C.
Verify the specific suffix '115' corresponds to the required tape-and-reel packaging configuration for automated assembly lines. Confirm that the SOT363 footprint matches the target PCB layout dimensions. Ensure the component meets AEC-Q101 qualification requirements if the application involves automotive systems. Cross-reference the datasheet revision date to ensure compatibility with current design specifications.
Select this component when a small form factor P-channel MOSFET is required for low-current switching tasks. The 50V rating suits general-purpose logic level applications. Consider the 0.17A current limit for load management. The SC-88 package offers space savings compared to larger SOT23 variants while maintaining comparable electrical performance for light loads.
This part belongs to Nexperia's BSS84AK series of P-channel Trench MOSFETs. The series is characterized by its use of advanced trench technology to minimize resistance and maximize switching speed. These devices are widely used in consumer electronics and industrial control boards where space constraints and efficient power switching are critical design factors.
The BSS84AKQB is a leadless DFN variant offering similar electrical characteristics but with different thermal and mechanical mounting properties. Verify pinout compatibility before substitution. Other family members like BSS84AKM offer higher current ratings but require larger packages.