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Product Detailed Parameters
- Description：MOSFET P-CH 50V 150MA SC75
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta), 770mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-75
- Package / Case：SC-75, SOT-416
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Overview
The BSS84AKT,115 is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes Trench MOSFET technology to achieve high switching speeds and logic-level compatibility. The device is housed in a small SOT23 (TO-236AB) surface-mounted plastic package. Key electrical specifications include a maximum drain-source voltage of 50 V and a continuous drain current of 180 mA at ambient temperature. It features an on-resistance of 7.5 Ω at 10 V gate-source voltage and 100 mA drain current. The component operates within a junction temperature range of -55°C to +150°C and is qualified under the AEC-Q101 standard for automotive applications.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Very fast switching characteristics enabled by Trench MOSFET technology
- Integrated electrostatic discharge (ESD) protection up to 1 kV
- Qualified for automotive use according to AEC-Q101 standards
Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Procurement Notes
Verify the manufacturer designation carefully, as Nexperia was formerly part of NXP Semiconductors. Confirm the specific suffix '115' corresponds to the required tape-and-reel packaging format. Ensure the component meets the AEC-Q101 qualification requirements if intended for automotive systems. Cross-reference the datasheet revision date to confirm technical parameters match the design specifications.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications. The 50 V rating suits 12 V or 24 V system architectures. The SOT23 package is ideal for space-constrained PCB layouts. Consider the 7.5 Ω on-resistance for power dissipation calculations in load-switching scenarios. Verify that the logic level compatibility matches the driving signal voltage.
Part Context
This device belongs to the BSS84 series of P-channel MOSFETs from Nexperia. It shares the same core die and electrical characteristics as the BSS84AK,215 but differs in packaging configuration. The 'T' suffix typically indicates a specific reel quantity or tape format variant within the Nexperia portfolio. It serves as a drop-in replacement for legacy NXP-branded BSS84AK components in existing designs.
Replacement Considerations
The BSS84AK,215 is a confirmed equivalent part number with identical electrical specifications. Other BSS84 variants may share the same die but require verification of package dimensions and thermal characteristics before substitution.
