ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.17A SOT666
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：170mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：36pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The BSS84AKV,115 is a dual P-channel enhancement-mode Trench MOSFET array manufactured by Nexperia. It features a maximum drain-source voltage of 50 V and a continuous drain current of 170 mA per device. The component is housed in an SOT-666 surface-mount package with three pins per channel configuration. Key electrical parameters include a maximum on-resistance of 7.5 Ω and a typical gate charge of 0.26 nC at specified conditions. It operates within a temperature range of -55°C to 150°C and complies with AEC-Q101 automotive standards.
Feature Summary
- Dual P-channel architecture providing two independent switching channels in a single compact package.
- Trench MOSFET technology designed for low on-resistance and efficient power management.
- AEC-Q101 qualification ensuring reliability and robustness for demanding automotive environments.
Applications
- Automotive load switching applications requiring high reliability.
- General purpose low-side or high-side switching circuits.
- Battery protection and management systems in electric vehicles.
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. The SOT-666 package offers space efficiency compared to discrete solutions. Ensure the 50 V rating aligns with system voltage levels. Consider the 170 mA current limit for load requirements. The AEC-Q101 compliance makes it suitable for automotive designs where long-term stability under thermal stress is critical.
Part Context
This part belongs to the BSS84AKW series of dual P-channel MOSFETs from Nexperia. It represents an evolution in small-signal switching components, focusing on automotive-grade reliability. The series utilizes advanced trench technology to improve performance metrics such as on-resistance and switching speed while maintaining a compact form factor suitable for modern electronic assemblies.
Replacement Considerations
Direct substitutes may include other dual P-channel MOSFETs in SOT-666 packages with matching 50 V and 170 mA ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Nexperia's official replacement guide for qualified alternatives.
