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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 50V 150MA SC70
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84AKW-BX is a P-channel enhancement mode MOSFET from Nexperia, utilizing TrenchMOS technology. It features a maximum drain-source voltage of 50 V and a continuous drain current of 150 mA at 25°C. The device operates in an SC-70 (SOT323) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 7.5 Ω at Vgs = -10 V and Id = 100 mA, and a typical gate charge of 0.26 nC at Vgs = -4.5 V. It supports a wide operating temperature range from -55°C to +150°C junction temperature and holds AEC-Q101 automotive qualification.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Fast switching performance enabled by TrenchMOS technology
- Integrated electrostatic discharge protection up to 1 kV
Applications
- High-side load switching
- Relay driver circuits
- High-speed line drivers
Procurement Notes
Verify the specific suffix BX against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordered part matches the required SC-70 footprint and pinout configuration. Confirm that the AEC-Q101 qualification status meets your project's reliability standards before finalizing procurement.
Selection Notes
Select this component for applications requiring small form factor P-channel switching with low gate charge. The 50 V rating suits low-voltage DC systems. Verify thermal management requirements given the 310 mW power dissipation limit in the SC-70 package. Ensure the driving circuit can provide sufficient negative gate-source voltage to fully enhance the channel.
Part Context
This device belongs to the BSS84AKW series of single P-channel MOSFETs. It shares core electrical characteristics with other variants in the family but differs in packaging and reel configuration. The SC-70 package provides space-efficient mounting for portable and compact electronic designs.
Replacement Considerations
Direct substitutes include BSS84AKW,115 and BSS84AK,215. Verify pin compatibility and package dimensions when replacing. Cross-reference datasheets to ensure equivalent Rds(on) and voltage ratings.
