BSS84AKW

$0.15

Description：MOSFET, P-CH, SINGLE, -0.3A, -60
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5989110e26ad Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET, P-CH, SINGLE, -0.3A, -60
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：270mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Download product information

BSS84AKW

Overview

The BSS84AKW is a P-channel enhancement mode MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-323 surface-mount package. It features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -0.3 A. The device exhibits low on-resistance, with maximum values of 4.7 Ω at VGS = -10 V and 5.7 Ω at VGS = -5 V. Power dissipation is rated at 270 mW, with a junction temperature range up to 150 °C. Gate-source voltage limits are ±20 V, and the component includes ESD protection rated at HBM 2 kV.

Feature Summary

Utilizes advanced MOSFET process technology for high cell density and low on-resistance.
Designed for fast switching and reverse body recovery performance.
Includes electrostatic discharge (ESD) protection rated at HBM 2 kV.

Applications

Load switch circuits
Hand-held devices
LED applications

Procurement Notes

Verify the specific manufacturer datasheet for the BSS84AKW when sourcing from Good-Ark Semiconductor or authorized distributors. Confirm that the SOT-323 package dimensions and marking codes match the required design specifications. Ensure compliance with the absolute maximum ratings, particularly regarding the 270 mW power dissipation limit and the 150 °C maximum junction temperature during operation.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with a 60 V breakdown voltage. The SOT-323 package is suitable for space-constrained PCB layouts. Consider the 4.7 Ω on-resistance at -10 V gate drive when calculating conduction losses. Verify that the -0.3 A continuous current rating meets the load requirements without exceeding thermal limits.

Part Context

This component belongs to the category of small-signal P-channel MOSFETs designed for general-purpose switching. It serves as a semiconductor solution for controlling power paths in portable electronics. The SOT-323 form factor provides a balance between electrical performance and minimal footprint compared to larger packages.

Replacement Considerations

Cross-reference with other manufacturers' 60 V P-channel MOSFETs in the SOT-323 package. Verify pinout compatibility and ensure that alternative parts meet or exceed the 4.7 Ω RDS(ON) specification at the intended gate drive voltage.