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Product Detailed Parameters
- Description：MOSFET P-CH 50V 150MA SOT323
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta), 830mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84AKW,115 is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology to achieve high switching speeds and logic-level compatibility. The device is housed in an SC-70 surface-mount package with three pins. Key electrical parameters include a maximum drain-source voltage of 50 V and a continuous drain current of 150 mA. The typical on-resistance is 7.5 Ω, with a maximum power dissipation of 310 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Feature Summary
- Trench MOSFET technology enables very fast switching performance.
- Logic-level compatible for direct interface with standard control signals.
- Integrated ESD protection rated up to 1 kV.
- Qualified for automotive applications under AEC-Q101 standards.
Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Procurement Notes
Verify the specific suffix 115 against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the required SC-70 package variant. Cross-reference the AEC-Q101 qualification status if automotive reliability is mandatory for the design. Confirm thermal resistance values from the datasheet for heat dissipation planning.
Selection Notes
Select this component when a small SOT23-compatible footprint is required for P-channel switching. The Trench technology offers superior switching characteristics compared to planar devices. Verify that the 150 mA current rating meets the load requirements. Check that the 50 V breakdown voltage provides sufficient margin for the application's supply voltage.
Part Context
This device belongs to the BSS84AKW series of P-channel MOSFETs. It represents Nexperia's implementation of Trench technology in a compact surface-mount form factor. The series is designed for applications requiring efficient switching in limited space. It serves as a modern alternative to older planar MOSFET designs in portable and automotive electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Nexperia's official cross-reference tools or datasheets for verified equivalents. Ensure any replacement maintains the same pinout, voltage ratings, and package dimensions.
