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The BSS84DWQ-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel MOSFETs within a single SOT363 surface-mount package. The device features a drain-source voltage (BVDSS) of -50V and a continuous drain current (ID) of -130mA at +25°C. The maximum static drain-source on-resistance (RDS(ON)) is 10Ω at VGS = -5V and ID = -0.1A. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 300mW and a thermal resistance (RθJA) of 417°C/W.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets the required AEC-Q101 qualification and PPAP capabilities if intended for automotive assembly lines. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Select this component when space-constrained designs require two isolated P-channel switching elements. Verify that the -50V breakdown voltage and -130mA current rating align with the circuit's load requirements. Consider the 10Ω RDS(ON) specification for power loss calculations at the target operating gate-source voltage.
This part belongs to the BSS84 family of dual P-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other automotive-grade small-signal transistors but distinguishes itself through its integrated dual-channel architecture in the SOT363 footprint, offering a compact solution for multi-switch logic or power control tasks.
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the SOT363 pinout compatibility, specifically the dual gate/drain/source arrangement, and matches the -50V voltage and -130mA current ratings.