BSS84DWQ-13

BSS84DWQ-13

$0.09
  • Description:MOSFET 2P-CH 50V 0.13A SOT363
  • Series:-

SKU:84d20be6b1f3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 50V 0.13A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
  • Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:45pF @ 25V
  • Power - Max:300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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BSS84DWQ-13

Overview

The BSS84DWQ-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent P-channel MOSFETs within a single SOT363 surface-mount package. The device features a drain-source voltage (BVDSS) of -50V and a continuous drain current (ID) of -130mA at +25°C. The maximum static drain-source on-resistance (RDS(ON)) is 10Ω at VGS = -5V and ID = -0.1A. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 300mW and a thermal resistance (RθJA) of 417°C/W.

Feature Summary

  • Dual configuration integrating two independent P-channel enhancement mode MOSFETs in a compact SOT363 package.
  • Qualified for automotive applications under AEC-Q101 standards and supported by PPAP documentation.
  • Designed for low on-resistance and fast switching speed to support high-efficiency power management.
  • Manufactured using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

  • General-purpose interfacing switches
  • Power-management functions
  • Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets the required AEC-Q101 qualification and PPAP capabilities if intended for automotive assembly lines. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when space-constrained designs require two isolated P-channel switching elements. Verify that the -50V breakdown voltage and -130mA current rating align with the circuit's load requirements. Consider the 10Ω RDS(ON) specification for power loss calculations at the target operating gate-source voltage.

Part Context

This part belongs to the BSS84 family of dual P-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other automotive-grade small-signal transistors but distinguishes itself through its integrated dual-channel architecture in the SOT363 footprint, offering a compact solution for multi-switch logic or power control tasks.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the SOT363 pinout compatibility, specifically the dual gate/drain/source arrangement, and matches the -50V voltage and -130mA current ratings.

BSS84DWQ-13BSS84DWQ-13
$0.09
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