BSS84DWQ-7

Overview

The BSS84DWQ-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT363 package. It features a drain-source voltage (V_DSS) of -50 V and a continuous drain current (I_D) of -130 mA at +25°C. The maximum static drain-source on-resistance (R_DS(ON)) is 10 Ω at V_GS = -5 V. Gate-source voltage limits are ±20 V, with a gate threshold voltage (V_GS(th)) ranging from -0.8 V to -2.0 V. Total power dissipation is 300 mW, and the operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent P-channel enhancement mode transistors within a single compact surface-mount package.
• Qualified for automotive applications through AEC-Q101 certification and PPAP capability, manufactured in IATF 16949 certified facilities.
• Designed for low on-resistance and fast switching speed to support high-efficiency power management functions.
• Compliant with RoHS standards and defined as a halogen- and antimony-free "Green" device.

Applications

• General-purpose interfacing switches
• Power-management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets the required AEC-Q101 qualification and PPAP standards if intended for automotive use. Ensure the selected variant matches the exact electrical specifications and thermal characteristics outlined in the datasheet for the target application environment.

Selection Notes

Select this component when a dual P-channel MOSFET solution is required for space-constrained designs utilizing the SOT363 footprint. Consider the -50 V breakdown voltage and -130 mA current rating to ensure adequate headroom for the load requirements. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area to maintain safe junction temperatures during operation.

Part Context

This part belongs to the BSS84 family of dual P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It shares core electrical characteristics with other variants in the series but is distinguished by its specific SOT363 packaging and automotive-grade qualification status. The family is designed to provide low on-state resistance while maintaining superior switching performance for efficient power management.

Replacement Considerations

Direct substitutes include the BSS84DWQ-13, which offers identical electrical specifications but is supplied in a 10,000-unit tape and reel format instead of 3,000 units. Verify pinout compatibility and package dimensions before substituting any alternative dual P-channel MOSFETs from other manufacturers.