BSS84IXUSA1

$0.20

Description：BSS84IXUSA1
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0810f1e474eb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：BSS84IXUSA1
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BSS84IXUSA1

Overview

The BSS84IXUSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 290 mA. The device exhibits a maximum on-resistance of 5.5 Ohms at a gate-source voltage of 20 V, with a threshold voltage of 2 V. Key switching parameters include a gate charge of 290 pC, a rise time of 3.1 ns, and a fall time of 48.7 ns. It operates within a temperature range of -55 C to +150 C, with a power dissipation rating of 960 mW.

Feature Summary

P-Channel silicon construction for small signal applications
Enhancement mode operation with low gate threshold voltage
High thermal stability supporting extended operating temperatures

Applications

Small signal switching circuits
Low power load management
General purpose transistor applications

Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official documentation before integration. Check moisture sensitivity levels for proper handling during assembly. Ensure the component matches the specific electrical requirements of the target circuit design.

Selection Notes

Select this component for applications requiring a compact P-Channel switch with moderate current capabilities. The 5.5 Ohm on-resistance suits low-power signaling rather than high-current power delivery. Consider the 290 mA limit when designing load paths. The wide temperature range supports diverse environmental conditions.

Part Context

This component belongs to Infineon's portfolio of small signal MOSFETs designed for efficient switching in consumer and industrial electronics. It utilizes standard surface mount packaging for automated assembly. The device represents a solution for space-constrained designs requiring reliable semiconductor switching performance.