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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT-23
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84LT1 is a single P-Channel Power MOSFET manufactured by onsemi, housed in a SOT-23 (TO-236) surface-mount package. It features a drain-to-source voltage rating of -50 Vdc and a continuous drain current of -130 mA at 25°C ambient temperature. The device supports a pulsed drain current of -520 mA and has a maximum power dissipation of 225 mW. Electrical characteristics include a gate-to-source voltage limit of ±20 Vdc and a static drain-to-source on-resistance of up to 10 Ω at VGS = -5.0 Vdc and ID = -100 mA.
Feature Summary
- Surface-mount SOT-23 package design for board space efficiency
- Integrated body diode for source-drain conduction
- Enhancement mode operation with low gate threshold voltage
- Lead-free and RoHS compliant construction
Applications
- Battery protection circuits
- Power management applications
- Load switching
- Automotive electronics requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number BSS84LT1 may be supplied as BSS84LT1G or BVSS84LT1G depending on the required packaging quantity and automotive qualification status. Confirm that the received component matches the intended pinout style and package dimensions specified in the mechanical case outline before integration into the final assembly.
Selection Notes
Select this component for low-current switching tasks where a compact footprint is necessary. Ensure the application voltage does not exceed the -50 Vdc drain-to-source breakdown rating. Consider the thermal resistance values provided for both free-air and mounted conditions when designing heat dissipation strategies for the circuit layout.
Part Context
This device belongs to the BSS84L family of single P-Channel MOSFETs from onsemi. It shares functional similarities with variants such as SBSS84LT1G and BVSS84LT1G, which differ primarily in packaging options or specific automotive compliance certifications. The standard BSS84LT1 serves as a general-purpose small-signal switching transistor.
Replacement Considerations
Direct substitutes within the same family include BVSS84LT1G and SBSS84LT1G. Verify compatibility regarding package marking styles and specific qualification requirements before substituting.
