BSS84LT1G

$0.14

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)

SKU:c3daae9cad1c Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

BSS84LT1G

Overview

The BSS84LT1G is a single P-channel power MOSFET in a SOT-23 surface-mount package. It features a drain-to-source voltage of -50 V and a continuous drain current of -130 mA at 25°C ambient temperature. The device has a maximum gate-to-source voltage of ±20 V and a total power dissipation of 225 mW. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Automotive-grade qualification compliant with AEC-Q101 standards
PPAP capable for unique site and control change requirements
Pb-free and RoHS compliant construction

Applications

DC-DC converters
Load switches
Communication and network equipment
Power management systems
Computer and peripheral devices

Procurement Notes

Verify the specific ordering suffix (e.g., LT1G) matches the required packaging quantity and automotive compliance level. Confirm that the BV prefix variant is selected if unique site and control change documentation is required for the application. Ensure the component meets all relevant environmental directives before final procurement.

Selection Notes

Select this component for low-current switching applications requiring a compact SOT-23 footprint. Evaluate the on-resistance and gate charge parameters against the specific drive voltage requirements of the circuit. Consider the thermal resistance characteristics when designing the PCB layout to ensure reliable operation within the specified temperature limits.

Part Context

This part belongs to the BSS84L family of single P-channel MOSFETs manufactured by onsemi. The series includes variants such as BVSS84L and SBSS84L, which share similar electrical characteristics but may differ in packaging or qualification levels. The BSS84LT1G specifically denotes the tape and reel packaging format.