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Product Detailed Parameters
- Description：MOSFET P-Channel 60V 150mA (Ta)
- Series：-
- Mfr：Flip Electronics
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BSS84PW H6327 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 150 mA. Key electrical characteristics include a maximum on-resistance of 4.6 Ohms, a gate-source voltage range of ±20 V, and a threshold voltage of 2 V. Additional parameters specify a gate charge of 1.5 nC, power dissipation of 300 mW, and operating temperatures from -55°C to +150°C.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Enhancement mode operation with low gate charge for fast response
- Automotive-grade qualification ensuring reliability in harsh environments
Applications
- Low-side load switching in automotive electronics
- Power management circuits requiring compact packaging
- General-purpose switching in consumer electronic devices
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact tape-and-reel quantities and RoHS compliance status. Ensure the component matches the required AEC-Q100 qualification level if intended for automotive use. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a compact P-Channel MOSFET with moderate voltage ratings is required. The SOT-323-3 package suits space-constrained designs. Evaluate the 4.6 Ohm on-resistance against thermal constraints for the expected load current. Confirm that the 60 V breakdown voltage exceeds the maximum circuit voltage with adequate safety margin.
Part Context
This component belongs to the BSS84 series of small-signal MOSFETs produced by Infineon Technologies. The series is designed for general-purpose switching applications where low cost and small footprint are priorities. The H6327 suffix typically denotes specific packaging and handling configurations provided by the manufacturer for automated assembly processes.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Generic replacements may differ in on-resistance or package dimensions. Ensure any substitute maintains the same pinout and meets the original voltage and current specifications.
